On the formation of epitaxial CoSi2from the reaction of Si with a Co/Ti bilayer
作者:
S.‐L. Zhang,
J. Cardenas,
F. M. d’Heurle,
B. G. Svensson,
C. S. Petersson,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 1
页码: 58-60
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114182
出版商: AIP
数据来源: AIP
摘要:
In spite of much work, the formation of epitaxial CoSi2from Ti/Co on (100) Si remains something of a mystery. It has been proposed that epitaxy occurs via the formation of an intermediate phase of CoSi with a (311) preferred orientation. In the absence of sufficient information it is impossible to validate or to invalidate the specific original claim. However, one shows that the formation of preferably oriented CoSi is not a necessary condition for the subsequent growth of epitaxial CoSi2. Careful measurements of diffraction intensities reveal the probable, temporary formation of a metastable form of CoSi2, based on a diamond cubic rather than the usual CaF2structure. ©1995 American Institute of Physics.
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