Nanosecond optical quenching of photoconductivity in a bulk GaAs switch
作者:
M. S. Mazzola,
K. H. Schoenbach,
V. K. Lakdawala,
S. T. Ko,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 20
页码: 2102-2104
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.102076
出版商: AIP
数据来源: AIP
摘要:
Persistent photoconductivity in copper‐compensated, silicon‐doped semi‐insulating gallium arsenide with a time constant as large as 30 &mgr;s has been excited by sub‐band‐gap laser radiation of photon energy greater than 1 eV. This photoconductivity has been quenched on a nanosecond time scale by laser radiation of photon energy less than 1 eV. The proven ability to turn the switch conductance on and off on command, and to scale the switch to high power could make this semiconductor material the basis of an optically controlled pulsed‐power closing and opening switch.
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