Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system
作者:
F. Chu,
G. Hickert,
T.D. Hadnagy,
K.K. Suu,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 26,
issue 1-4
页码: 47-55
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215609
出版商: Taylor & Francis Group
关键词: ferroelectric thin films;ferroelectric capacitors
数据来源: Taylor
摘要:
Thin films of Ca and Sr doped PLZT(3/40/60) were RF sputtered on 6-inch substrates using ULVAC CERAUS ZX-1000 magnetron sputtering system. The 2000 Å PLZT films showed good thickness uniformity across the wafer (less than ± 1.5%). The crystallized PLZT films are highly {111} textured. The 3V QSWis above 30 μC/cm2and V90%is below 3.5V. After 109fatigue cycles, 3V Qswis still 29 μC/cm2. The films also showed good retention properties. 3V Qss(10year) = 12 μC/cm2, 3V QOS(10year) = 9 μC/cm2. The same process was utilized to run 1000 wafers on ZX-1000. The stable ferroelectric performance achieved during 100 kWh sputtering indicates good repeatability of the ZX-1000 mass production tool.
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