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Ferroelectric properties of PLZT thin films prepared using ULVAC ZX-1000 sputtering system

 

作者: F. Chu,   G. Hickert,   T.D. Hadnagy,   K.K. Suu,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1999)
卷期: Volume 26, issue 1-4  

页码: 47-55

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908215609

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric thin films;ferroelectric capacitors

 

数据来源: Taylor

 

摘要:

Thin films of Ca and Sr doped PLZT(3/40/60) were RF sputtered on 6-inch substrates using ULVAC CERAUS ZX-1000 magnetron sputtering system. The 2000 Å PLZT films showed good thickness uniformity across the wafer (less than ± 1.5%). The crystallized PLZT films are highly {111} textured. The 3V QSWis above 30 μC/cm2and V90%is below 3.5V. After 109fatigue cycles, 3V Qswis still 29 μC/cm2. The films also showed good retention properties. 3V Qss(10year) = 12 μC/cm2, 3V QOS(10year) = 9 μC/cm2. The same process was utilized to run 1000 wafers on ZX-1000. The stable ferroelectric performance achieved during 100 kWh sputtering indicates good repeatability of the ZX-1000 mass production tool.

 

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