Novel fabrication process utilizing thermal stress for uniform ultrafine SiO2gaps with perfectly vertical sidewalls
作者:
Tohru Nishibe,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1429-1433
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588166
出版商: American Vacuum Society
关键词: SILICON OXIDES;INDIUM PHOSPHIDES;SUBSTRATES;COMPARATIVE EVALUATIONS;THERMAL STRESSES;NANOSTRUCTURES;DEPOSITION;SiO2
数据来源: AIP
摘要:
A novel fabrication process for uniform ultrafine SiO2gaps with perfectly vertical sidewalls is proposed and experimentally demonstrated. The gaps without undulation were successfully fabricated by splitting the SiO2layer along the guidelines established beforehand, utilizing thermal stress between the SiO2layer and the InP substrate. High uniformity of the gap width of less than 5% along 200 μm has been obtained. Minimum gap width of 20 nm has been realized. Moreover, this ‘‘split mask’’ was found to be applicable as a selective regrowth mask and a dry etching mask.
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