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Nonequilibrium luminescence at theE0+&Dgr;0gap in GaAs with Si‐&dgr; doping

 

作者: N. Mestres,   F. Cerdeira,   F. Meseguer,   A. Ruiz,   J. P. Silveira,   F. Briones,   K. Ploog,  

 

期刊: Journal of Applied Physics  （AIP Available online 1992）
卷期: Volume 71, issue 11  

页码: 5619-5622

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.350492

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We studied the light scattering spectra of three molecular beam epitaxy GaAs samples with Si‐&dgr; doping. A broad feature appears in these spectra which is similar to that attributed by other authors to resonant Raman scattering by electronic intersubband transitions. By studying the dependence of this emission on exciting laser photon energy we believe that this line is really produced by nonequilibrium luminescence at theE0+&Dgr;0gap.

 

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