Deep level transient spectroscopy and transport properties measurements were performed on close‐spaced vapor transport deposited epitaxial GaAs. The deep EL2 donor level was consistently observed in all of the layers. A side band at around 300 K was found to be present in relatively high concentration close to the as‐grown surface of the epitaxial films. The multilevel impurity model treatments suggest the existence of an off‐stoichiometry‐induced deep acceptor level, related to possible gallium vacancies, in As‐rich GaAs.