Phosphorus ion implantation induced intermixing of InGaAs‐InP quantum well structures
作者:
B. Tell,
J. Shah,
P. M. Thomas,
K. F. Brown‐Goebeler,
A. DiGiovanni,
B. I. Miller,
U. Koren,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 16
页码: 1570-1572
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101316
出版商: AIP
数据来源: AIP
摘要:
We have studied P ion implantation induced intermixing of In0.53Ga0.47As quantum wells embedded between InP barriers. Data are presented for both standard furnace anneals at 650 °C and rapid thermal anneals at 750 °C. Low‐temperature photoluminescence and quantitative Auger electron spectroscopy were performed for furnace‐annealed samples for which photoluminescence shifts of ∼200 meV were in excellent agreement with the calculated band gap for the lattice matched composition determined by Auger spectroscopy. Photoluminescence studies of rapid thermal annealed samples yield an energy gap shift of ∼150 meV for annealing times of at least 10 s.
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