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High quality hydrogenated amorphous silicon films by windowless hydrogen discharge

 

作者: Akira Yoshida,   Katsushi Inoue,   Haruhiko Ohashi,   Yoji Saito,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 57, issue 5  

页码: 484-486

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103627

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Hydrogenated amorphous silicon films were deposited by the direct photolysis of disilane using windowless hydrogen discharge. Electrical and optical properties of the films have been investigated. The photosensitivity (&sgr;ph/&sgr;d) is about 107in the films prepared at 250 °C, better than that of films obtained by conventional rf plasma chemical vapor deposition.

 

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