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Observation of thermal carrier generation in buried channel charge coupled devices

 

作者: G. J. Mayer,  

 

期刊: Journal of Applied Physics  （AIP Available online 1979）
卷期: Volume 50, issue 1  

页码: 546-547

 

ISSN:0021-8979

 

年代: 1979

 

DOI:10.1063/1.325650

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thermal carrier generation in a buried channel charge coupled device has been observed experimentally. The generation rate decreases dramatically as the potential well fills, compared to the same characteristic in a surface channel charge coupled device.

 

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