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Evidence of strong Auger recombination in semiconductor‐doped glasses

 

作者: F. de Rougemont,   R. Frey,   P. Roussignol,   D. Ricard,   C. Flytzanis,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 23  

页码: 1619-1621

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97746

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Intracavity nearly degenerate four‐wave mixing has been used together with transmission measurements to evidence the important role played by Auger recombination in the relaxation rate of electron‐hole pairs in semiconductor‐doped glasses pumped by high laser intensities. Results show a shortening by a factor of 100 of the recombination carrier lifetime when the laser intensity is near damage threshold.

 

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