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Metastability and polarization effects in apnheterojunction device due to deep states

 

作者: Michael Stavola,   F. Capasso,   J. C. Nabity,   K. Alavi,   A. Y. Cho,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 15  

页码: 997-999

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96636

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Unusual metastable and polarization behavior has been observed for Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiodes by capacitance spectroscopy. The metastability arises from interplay of the heterojunction barrier with defects in the Al0.48In0.52As layer. Defect occupation controls the reverse bias characteristics of the device while the heterojunction presents a barrier to carrier capture by the defects.

 

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