PIMOD processing and properties of a LiNbO3-based MFSFET for nonvolatile memories
作者:
CharlesH.-J. Huang,
He Lin,
ThomasA. Rabson,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 4,
issue 3
页码: 191-195
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408017021
出版商: Taylor & Francis Group
关键词: LiNbO3;MFSFET;MOD;Nonvolatile memories
数据来源: Taylor
摘要:
The photo-induced metallo-organic decomposition (PIMOD) process has been successfully used to deposit a lithium niobate thin film acting as the gate oxide of the conventional MFSFET structure. The use of the low-temperature PIMOD process for thin film deposition has increased the device yields of the molybdenum liftoff for small area isolation. The electronic alteration of the properties of the ferroelectric gate transistor was previously shown to be caused by charges in the semiconductor being injected into the ferroelectric film. To prevent this problem, a thin SiO2buffer layer was thermally grown on the silicon substrate immediately before lithium niobate deposition. The silicon-lithium niobate interface was stabilized and the charge injection effect was eliminated due to the formation of the buffer layer. The channel current was shown to be greatly altered by the application of voltage pulses between the gate of the device and the substrate. Upon switching, the change in surface conductivity of the semiconductor was the same as that expected for ferroelectric switching.
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