The effect of compression on grain growth in Al and Al(Cu) films on oxidized Si substrates has been studied. Samples were compressed in a uniaxial press during annealing at 400 °C, and then examined using focused ion beam imaging. It was found that the compressed regions had a final grain size roughly a factor of 3 larger than in the uncompressed regions. This behavior is interpreted as due to a decrease in grain boundary grooving and the pinning forces associated with them, thus allowing enhanced grain growth. ©1998 American Institute of Physics.