Thin silicon ion-implantedp-i-nphotodiodes
作者:
R.G.Plumb,
J.E.Carroll,
期刊:
IEE Journal on Solid-State and Electron Devices
(IET Available online 1977)
卷期:
Volume 1,
issue 3
页码: 89-91
年代: 1977
DOI:10.1049/ij-ssed.1977.0010
出版商: IEE
数据来源: IET
摘要:
Thin (6μm) thick Si has been ion implanted to fabricate ap–i–nphotodiode with an overall rise time probably better than 80 ps. The narrow depletion region gives short transit times, and the shallow ion-implanted junctions lead to minimal amounts of minority carrier storage, thus eliminating any slow tail to the voltage-output response to a step change of light input.
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