Reverse current transient behavior in amorphous silicon Schottky diodes at low biases
作者:
R. I. Hornsey,
K. Aflatooni,
A. Nathan,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 24
页码: 3260-3262
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119141
出版商: AIP
数据来源: AIP
摘要:
The application of hydrogenated amorphous silicon Schottky diodes to large-area imaging requires knowledge of the variation in reverse-bias current over long timescales. When the diode is subject to electrical stress, a power-law dependence of reverse current with time is observed. This is followed by a stretched-exponential behavior during the subsequent zero-bias recovery period. Both of these results are attributed to dispersive electron transport in the Schottky diode. ©1997 American Institute of Physics.
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