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Tunable InGaAs/GaAs/InGaP laser

 

作者: N. K. Dutta,   W. S. Hobson,   J. Lopata,   G. Zydzik,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 10  

页码: 1219-1220

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118534

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The fabrication and performance characteristics of a tunable InGaAs/GaAs/InGaP laser emitting near 980 nm are reported. The tunability is achieved using the thermoelectric effect of the substrate. A tuning range of>6nm has been demonstrated using∼60mA of thermoelectric controller current. ©1997 American Institute of Physics.

 

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