Cuspidal pit formation during the growth of SixGe1−xstrained films
作者:
K. M. Chen,
D. E. Jesson,
S. J. Pennycook,
T. Thundat,
R. J. Warmack,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 1
页码: 34-36
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114172
出版商: AIP
数据来源: AIP
摘要:
We have studied the formation of cuspidal pits during the growth of strained SixGe1−xalloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress‐driven surface diffusion associated with a localized initial perturbation of the buffer layer surface. ©1995 American Institute of Physics.
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