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Cuspidal pit formation during the growth of SixGe1−xstrained films

 

作者: K. M. Chen,   D. E. Jesson,   S. J. Pennycook,   T. Thundat,   R. J. Warmack,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 1  

页码: 34-36

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114172

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have studied the formation of cuspidal pits during the growth of strained SixGe1−xalloy layers at relatively high supersaturations. The pit formation is directly linked to strain in the alloy layer, and we propose a heterogeneous formation mechanism in which the pits develop from stress‐driven surface diffusion associated with a localized initial perturbation of the buffer layer surface. ©1995 American Institute of Physics.

 

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