We have used the deep level transient spectroscopy signal height as a function of applied stress data and the statistics of the occupancy of theDXcenter to obtain the stress dependence of the thermal binding energy of the neutralDXcenter,EDX. We find thatEDXdecreases with about the same rate for uniaxial stresses along ⟨100⟩ and ⟨111⟩ directions. Our results confirm that theDXcenter is a highly localized center as proposed by Chadi and Chang and disagree with the model assuming theDXcenter being an effective mass state of the doping impurity associated with theLband.