A lead‐alloy Josephson junction with excellent uniformity of critical currents is proposed. The junction, consisting of a thin Pb‐In‐Au base electrode and an &egr;‐phase Pb‐Bi counterelectrode, is made on a thick Nb electrode. SiO openings, which define the junction area, are formed not after but before deposition of the base electrode. Using this structure, junctions can be formed free from any wet process of photolithography from the base to counter electrodes. Current‐voltage (I‐V) characteristics of series‐connected junctions are measured and uniformity of the critical currents is estimated. DespiteI‐Vcharacteristics representing large subgap current and small gap voltage, good uniformity of the critical currents is observed. The maximum to minimum spread of critical currents is ±4.1% for a 186‐junction chain with a junction area of 5 &mgr;m square. A standard deviation of 1.5% is obtained, a value about one‐third of that obtained for the conventional lead‐alloy junctions.