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Materials interactions in the integration of PZT ferroelectric capacitors

 

作者: R.E. Jones,   P.D. Maniar,   A.C. Campbell,   R. Moazzami,   J.L. Dupuie,   R.B. Gregory,   M.L. Kottke,   M.L. Bozack,   J.R. Williams,   J.M. Ferrero,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1995）
卷期: Volume 6, issue 1-4  

页码: 81-92

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508019355

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Investigations of materials interactions that complicate the integration of PZT ferroelectric capacitors into CMOS technologies are discussed. These include interactions within the Pt/Ti electrodes structure, the reactions of sol-gel deposited PZT during crystallization with various underlying dielectrics (SiO2, Si3N4, Al2O3, and TiO2), and the impact of other integrated circuit processes on fabricated capacitors.

 

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