Growth and characterization of InxGa1−xAs/InyGa1−yAs strained‐layer superlattice on InP substrate
作者:
M. Quillec,
J. Y. Marzin,
J. Primot,
G. Le Roux,
J. L. Benchimol,
J. Burgeat,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 7
页码: 2447-2450
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336348
出版商: AIP
数据来源: AIP
摘要:
The InxGa1−xAs/InyGa1−yAs strained‐layer superlattices can be grown lattice matched to an InP substrate if proper compositions and thicknesses are chosen. Such structures were grown by molecular‐beam epitaxy. The wavelength range covered by this material is from 1.65 &mgr;m to beyond 2 &mgr;m. Structural (double x‐ray diffraction) and optical (absorption) characterizations were performed and quantitatively interpreted; they show the excellent properties of these structures.
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