Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films
作者:
Y. M. Li,
R. M. Dawson,
R. W. Collins,
C. R. Wronski,
S. Wiedeman,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 20
页码: 2549-2551
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.105949
出版商: AIP
数据来源: AIP
摘要:
The spectral dependence of the photocurrent in intrinsic hydrogenated amorphous silicon (a‐Si:H) films was measured in the annealed and light‐soaked states. The photocurrents were modeled using numerical analysis which quantified the recombination in both the bulk as well as at the film surface and glass substrate interface. The results on films, having thicknesses between 1 and 3 &mgr;m, are consistent with thickness independent bulk transport properties and surface and substrate interface recombination velocities of (3–6)×104and (1–2)×106cm/s, respectively.
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