Metalorganic vapor phase epitaxy of coherent self-assembled InAs nanometer-sized islands in InP(001)
作者:
H. Marchand,
P. Desjardins,
S. Guillon,
J.-E. Paultre,
Z. Bougrioua,
R. Y.-F. Yip,
R. A. Masut,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 4
页码: 527-529
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119609
出版商: AIP
数据来源: AIP
摘要:
The metalorganic vapor phase epitaxy of coherent self-assembled InAs islands on InP(001) is demonstrated. Samples are characterized using transmission electron microscopy and photoluminescence (PL) spectroscopy at 77 K. The deposition of ∼2.4–4.8 monolayers (ML) of InAs at 500°C followed by a 30 s growth interruption results in the formation of coherent islands whose average diameter is 30–35 nm with a standard deviation of 8 nm and whose areal density is(3–4)×1010cm−2.The PL emission is centered at 0.79 eV and has a full width at half maximum (FWHM) of 90 meV. When the nominal deposited thickness is increased to ∼9.6 ML, the average island diameter increases to ∼120 nm while the areal density decreases to∼109cm−2.The resulting PL is then centered at 0.83 eV with a FWHM of 130 meV and also displays a peak at 1.23 eV which is attributed to an InAs wetting layer∼2 ML in thickness. ©1997 American Institute of Physics.
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