A hybrid growth technique has been used to fabricate low‐threshold, high‐modulation bandwidth, and high‐power 1.3 &mgr;m InGaAsP buried crescent injection lasers. The technique involves a first growth of an Fe‐doped semi‐insulating current confinement layer by low‐pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy regrowth. The lasers have cw threshold currents as low as 10 mA at 25 °C, total differential quantum efficiency over 50%, high‐temperature operation up to 100 °C, and output power more than 33 mW/facet. A 3‐dB modulation bandwidth of 8.4 GHz has been achieved at 5 mW/facet.