Small valence-band offsets at GaN/InGaN heterojunctions
作者:
Chris G. Van de Walle,
Jo¨rg Neugebauer,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 19
页码: 2577-2579
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118924
出版商: AIP
数据来源: AIP
摘要:
The band discontinuities between GaN and InN, as well as InGaN alloys, are key parameters for the design of nitride-based light emitters. Values reported to date are subject to large uncertainties due to strain effects at this highly mismatched interface. We have investigated the band lineups using first-principles calculations with explicit inclusion of strains and atomic relaxations at the interface. We find that the “natural” valence-band offset between unstrained InN and GaN is 0.3 eV. Prescriptions are given, including the band shifts, due to strains at a pseudomorphic interface. ©1997 American Institute of Physics.
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