The concept of the capacitively coupled single-electron transistor (CSET) is generalized to a device based on a linear array ofNtunnel junctions. The basic characteristics of such multiple-junction CSETs are calculated for several distributions of tunnel junction and coupling capacitances. The results indicate that for optimized parameters, the operating temperature and parameter tolerances increase appreciably withN, with the most striking gains forN≲5. For example, a five-junction transistor may provide a 2.5-fold increase of the maximum operating temperature, for the same minimum feature size. ©1998 American Institute of Physics.