Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC
作者:
C. Peppermu¨ller,
R. Helbig,
K. Rottner,
A. Scho¨ner,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 8
页码: 1014-1016
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118468
出版商: AIP
数据来源: AIP
摘要:
We investigated the low temperature(T<2K) photoluminescence (LTPL) emission of 6H–SiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at1700 °C, we detected new LTPL emission at 4205 Å. After implantation of hydrogen into the boron-implanted and annealed sample, another LTPL emission at 4183 Å appeared. We interpret two additional peaks as vibrational modes of the 4183 Å emission with energies of 86 and 118 meV. ©1997 American Institute of Physics.
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