The electrical activation characteristics of Si+and Be+ions implanted into InGaAsP (&lgr;=1.3 &mgr;m) grown lattice matched to InP by metalorganic molecular beam epitaxy were studied as a function of ion dose (5×1012–5×1014cm−2), annealing time (3–60 s) and annealing temperature (575–750 °C). Maximum doping concentrations of ∼2×1019cm−3were obtained for both Si+and Be+, with activation energies for electrical activation of 0.58 and 0.39 eV, respectively. Multiple energy F+or H+implants can be used to produce high resistance layers for isolation purposes—maximum sheet resistances of ∼8×106&OHgr;/&laplac; or ∼106&OHgr;/&laplac; for initiallyp+orn+InGaAsP, respectively, were obtained for F+implants followed by annealing near 450 °C. Smooth, anisotropic dry etching of the InGaAsP is obtained with electron cyclotron resonance CH4/H2/Ar discharges at low dc biases. The etch rates are the same for bothn+andp+quaternary layers and are independent of the doping level.