The capture kinetics and trapping properties of a dislocation related electron trap detected in strain‐relaxed, compositionally graded Ge0.3Si0.7/Si grown by rapid thermal chemical‐vapor deposition are investigated by deep‐level transient spectroscopy (DLTS). The volume DLTS trap concentration scales linearly with the areal threading dislocation density, as determined by electron‐beam‐induced current measurements on samples with different compositional grading rates, indicating that the detected trap is most likely associated with dislocation core states in these graded structures. The dislocation related trap exhibits both the logarithmic dependence of DLTS peak height on fill pulse timetp, and broadened DLTS peaks which typically characterize carrier trapping at dislocations. These effects are quantified and analyzed to gain insight into the trapping properties of dislocations in GeSi/Si heterostructures and to investigate the effects of dislocation related carrier trapping on DLTS measurements. It is demonstrated that the peak broadening, as characterized by the dimensionless broadening parameter FWHM/Tp, where FWHM andTpare the full width at half‐maximum of the DLTS peak and the DLTS peak temperature, respectively, monotonically decreases with decreasing fill pulse duration, and approaches point‐defectlike behavior fortp<100 &mgr;s.The observed broadening is asymmetric aboutTp, and occurs predominantly on the low‐temperature side of the DLTS peak. This asymmetric broadening is shown to shift the ‘‘apparent’’ trap activation energy, as determined by Arrhenius analysis, fromEC−0.6 eV toEC−0.9 eV (relative to the bulk conduction‐band edge) astpdecreases from 5 ms to 50 &mgr;s. These observations are explained by the presence of a dislocation related distribution of energy levels within the GeSi band gap and the consequent fill‐pulse‐dependent local band bending. The lowest‐energy states within this distribution are preferentially filled with electrons for short fill pulse times. The Arrhenius‐determined ‘‘apparent’’ activation energy is hence interpreted as being a measure of the average energy of the filled defect states, weighted by the density of states distribution in this energy band and by the related fill‐pulse‐dependent local band bending. It is further demonstrated that the minority‐carrier capture cross section may be enhanced by the presence of an attractive coulombic barrier for minority carriers at the dislocations, and we use the logarithmic capture equations to derive a value of 4×10−12cm2for this ‘‘effective’’ capture cross section. ©1995 American Institute of Physics.