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Control of forward voltage in heterostructure transistors

 

作者: C. L. Reynolds,   M. P. Iannuzzi,   H. H. Vuong,   S. M. Parker,  

 

期刊: Journal of Applied Physics  （AIP Available online 1993）
卷期: Volume 74, issue 9  

页码: 5874-5876

 

ISSN:0021-8979

 

年代: 1993

 

DOI:10.1063/1.354160

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that the forward voltage of heterostructure transistors can be modified by varying the thickness of the undoped GaAs layer beneath the gate or by low energy ion implantation of a surface layer. This suggests that the effective barrier height can be controlled by either technique.

 

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