Sources of oxidation‐induced stacking faults in Czochralski silicon wafers
作者:
G. A. Rozgonyi,
S. Mahajan,
M. H. Read,
D. Brasen,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 9
页码: 531-533
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.89174
出版商: AIP
数据来源: AIP
摘要:
Using optical microscopy/etch pit techniques for the delineation of defects in {100} Czochralski silicon wafers we have made a one‐to‐one correlation between bulk stacking faults in oxidized wafers and etch hillocks identified at the same sites before oxidation. Transmission electron microscopy of the hillock defects shows them to be clusters of precipitates ranging in size from 0.01 to 0.3 &mgr;m. A discussion of these stacking‐fault nucleation sites in light of previous work on ’’swirl’’ defects in float‐zone wafers and attempts at preoxidation gettering are also presented along with a model for the formation of the extrinsic stacking faults.
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