Lead zirconate titanate films are deposited using a planar multi-target sputtering system. This system consists of three metallic targets (Zr, Pb, Ti) and a rotating substrate holding pallet achieving a layer-by-layer growth of the material.Substrates used in this study were oxidised (100) Si wafers with thin sputtered Pt layer. At substrate temperatures of about 450°C “in situ” (i.e. without post-deposition annealing) deposition of single phase perovskite PZT was obtained. Deposition rate is 3.5 nm/min. At substrate temperatures of more than 500°C the layers are poor in lead. ZrTiO4 was identified by x-ray diffraction.The dielectric constant and losses of the PZT films varied from 400-500 and from 0.008-0.015 respectively. The films exhibited a hysteresis loop, remanent polarization measured was 7 μC/cm2 and coercive field strength 7.5*106 V/m.