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Repair techniques for silicon transmission masks used for submicron lithography

 

作者: U. F. W. Behringer,   P. Vettiger,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1986)
卷期: Volume 4, issue 1  

页码: 94-99

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583402

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;MASKING;REPAIR;SILICON;ION COLLISIONS;ELECTRON COLLISIONS;FABRICATION;ION BEAMS;ELECTRON BEAMS;RESOLUTION;Si

 

数据来源: AIP

 

摘要:

This paper describes several methods for the repair of stencil masks as used for electron‐ or ion‐beam shadow projection systems. Such a mask consists of a thin membrane about 3 μm thick with pattern as physical holes. The fabrication process is described elsewhere [H. Bohlenetal., inProceedingsoftheElectronandIonBeamScienceandTechnologyConference1978; U. Behringeretal. (unpublished)]. This mask may contain pinholes besides the desired pattern holes; also pattern holes may deviate from their designed size. The first step in the repair process is for a resist layer to be spun onto the whole mask area. Even larger holes with dimensions up to 1 mm are closed in such a way. In a second step, the resist layer is again opened at the pattern positions. We have investigated different methods to reopen the design pattern. The ‘‘block‐out’’ method uses a second transmission mask with an identical pattern. Owing to the statistical distribution of the defect holes, only the designed pattern holes will be reopened. The so‐called ‘‘writing methods’’ use a scanning e‐beam system to reopen the circuit pattern. The structural resist works as a substrate for a gold deposition from the reverse side of the transmission mask. After the gold deposition, this resist layer is removed by an O2plasma leaving behind a self‐supporting Au layer closing the undesired openings. Another repair method, the so‐called ‘‘darning method,’’ closes defect holes in the mask by contamination writing.

 

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