Photoassisted oxidation of amorphous SiOx
作者:
R. A. B. Devine,
G. Auvert,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 23
页码: 1605-1607
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97294
出版商: AIP
数据来源: AIP
摘要:
The oxidation in air of substoichiometric films of SiOxby scanned, cw laser irradiation at 500 nm has been studied as a function of incident power density up to a maximum of 5.3 MW/cm2. Results obtained on substrates having widely different thermal conductivities suggest that the oxidation is thermally stimulated. Observed Auger electron spectra and measured refractive indices in oxidized films are characteristic of amorphous SiO2.
点击下载:
PDF
(213KB)
返 回