Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope
作者:
F. Marchi,
V. Bouchiat,
H. Dallaporta,
V. Safarov,
D. Tonneau,
P. Doppelt,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 6
页码: 2952-2956
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590325
出版商: American Vacuum Society
关键词: Si:H;SiO2
数据来源: AIP
摘要:
We present an experimental study of growth of silicon oxide strips drawn on hydrogenated silicon under the voltage biased tip of an atomic force microscope operating in ambient atmosphere. Oxide formation was found to occur at negative tip biases above a voltage threshold around|−2|V,corresponding to the minimum electric field required for hydrogen removal from the substrate surface. We show the influence of tip-sample distance and of the chemical composition of the atmosphere on the growth. An ozone enriched atmosphere leads to a growth kinetics enhancement.
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