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Directional effects in ion scattering by semiconductor crystals

 

作者: V.A. Molchanov,   V.A. Snisar,  

 

期刊: Radiation Effects  （Taylor Available online 1972）
卷期: Volume 12, issue 1-2  

页码: 105-109

 

ISSN:0033-7579

 

年代: 1972

 

DOI:10.1080/00337577208231127

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The spatial distributions of fast particles ejected from silicon and germanium targets bombarded with 10–30 keV energy noble gas ions have been experimentally studied. All the experiments were performed for both crystalline and amorphized target surfaces. The obtained distributions were found strongly influenced by the crystalline structure of the target.

 

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