ZnTe films have been prepared by hot wall epitaxy onto glass and single‐crystal potassium chloride substrates. The electron transport properties in polycrystalline and single‐crystal films have been reported. The electrical resistivity decreases very slowly up to dopant concentrations 1016at./cm3followed by a steep fall. The drift mobility appears to be fairly constant over a wide range of dopant concentrations, while it shows rapid decline on heavy doping.