LDMOS transistors with implanted and deposited surface layers
作者:
K.Board,
M.Darwish,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 4
页码: 177-180
年代: 1985
DOI:10.1049/ip-i-1.1985.0038
出版商: IEE
数据来源: IET
摘要:
The effects of ion-implanted layers together with deposited surface films on resurfed LDMOS transistors is studied. The specific on-resistance of lateral DMOS transistors is calculated and compared for two types of device, the ‘resurfed’ structure and a surface implanted SIPOS covered structure. Device parameters are first chosen so as to give 600 V breakdown for each type. It is shown that an LDMOS device with a surface implanted layer and SIPOS overlay gives superior performance with respect both to on resistance and insensitivity of the breakdown voltage to fluctuations in substrate doping density.
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