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On dislocation generation in semiconductor crystals

 

作者: H. Alexander,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 1-12

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908212976

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Thermal fluctuations combined with moderate stress are not able to nucleate dislocations in a perfect crystal. Rather some heterogeneous nucleation (surface defects, precipitates, lattice mismatch etc.) is necessary.

 

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