Uniform‐stress tungsten on x‐ray mask membranes via He–backside temperature homogenization
作者:
Mark Mondol,
Huiying Li,
Gabrielle Owen,
Henry I. Smith,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 6
页码: 4024-4027
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587423
出版商: American Vacuum Society
关键词: MASKING;MEMBRANES;STRESSES;LITHOGRAPHY;X RADIATION;TUNGSTEN;SPUTTERING;TEMPERATURE GRADIENTS;ABSORBERS;W
数据来源: AIP
摘要:
When x‐ray absorbers such as W are sputtered directly onto x‐ray mask membranes a large temperature gradient is set up due to the power input from the plasma, and the very inefficient thermal conduction in the plane of the thin membrane. To obtain absorber stresses sufficiently low that pattern distortion is negligible, the temperature gradient across the membrane must be no greater than a few degrees. To achieve this we introduce He at about 665 Pa (5 Torr) between the back surface of the membrane and an Al heat sink heated to 200 °C, separated by 1 mm. Uniform stress is easily achieved. The He gas also allows one to implement aninsitustress control feedback system based on an array of optically based gap sensors which can determine stress of the deposited film from the change in the pressure‐induced bulge of the membrane.
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