Zero‐dimensional states in submicron double‐barrier heterostructures laterally constricted by hydrogen plasma isolation
作者:
M. Van Hove,
R. Pereira,
W. De Raedt,
G. Borghs,
R. Jonckheere,
C. Sala,
W. Magnus,
W. Schoenmaker,
M. Van Rossum,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 158-160
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352151
出版商: AIP
数据来源: AIP
摘要:
The lateral dimensions of resonant tunneling AlGaAs‐GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current‐voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero‐dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.
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