Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAszdouble heterojunctions in an external grating cavity
作者:
P. D. Wright,
J. J. Coleman,
N. Holonyak,
M. J. Ludowise,
G. E. Stillman,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 1
页码: 18-20
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88878
出版商: AIP
数据来源: AIP
摘要:
In1−xGaxP1−zAszdouble heterojunctions (77 °K, yellow) are shown to exhibit either (or both) homogeneous or inhomogeneous line broadening when operated as lasers in an external grating cavity. Just above threshold, inhomogeneous line broadening is observed over much of the recombination spectrum. Well above threshold (large gain), homogeneous line broadening is observed when the grating is tuned onto the cavity modes in the region of line center.
点击下载:
PDF
(235KB)
返 回