Determination of electric field profiles in amorphous silicon solar cells
作者:
R. Ko¨nenkamp,
S. Muramatsu,
H. Itoh,
S. Matsubara,
T. Shimada,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 5
页码: 478-480
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103672
出版商: AIP
数据来源: AIP
摘要:
Time‐resolved photoconductivity measurements with subnanosecond time resolution are applied to study the electric field profile in amorphous silicon solar cells in the range from 0.3 V forward to 0.8 V reverse bias. The method is used for a comparison of state‐of‐the art devices with different junction design. Optical and electrical contributions to the device performance are discussed and the limitations in improving the performance by use ofa‐SiC:H window layers are pointed out.
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