Electrical Characterization of C60Evaporated Films Using MOS Structure
作者:
Kazuhiro Kudo,
Takuya Saraya,
Shigekazu Kuniyoshi,
Kuniaki Tanaka,
期刊:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
(Taylor Available online 1995)
卷期:
Volume 267,
issue 1
页码: 423-428
ISSN:1058-725X
年代: 1995
DOI:10.1080/10587259508034026
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Field effect and capacitance-voltage characteristics of vacuum evaporated C60films are studied using metal-oxide-semiconductor structures such as metal / C60/ SiO2/ n+-Si or C60/ source-drain electrodes / SiO2/ n+-Si. The electrical conductivity, carrier type, carrier concentration, and carrier mobility are estimated from these measurements. In particular, electrical characteristics during the deposition in vacuum and the influence of oxygen and nitrogen gases are investigated by the in-situ field effect measurement.
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