Quasisaturation effect in high-voltage VDMOS transistors
作者:
J.L.Sanchez,
M.Gharbi,
H.Tranduc,
P.Rossel,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1985)
卷期:
Volume 132,
issue 1
页码: 42-46
年代: 1985
DOI:10.1049/ip-i-1.1985.0010
出版商: IEE
数据来源: IET
摘要:
In this paper dealing with the so-called quasisaturation current limitation in high-voltage VDMOS transistors, the authors have given a linear law on the dependence of the on-state conductance on the square-root of the drain bias. A four-section model, taking into account the pinching of the drain epilayer by the space-charge extensions and the current spreading in the bulk, accounts for the quasisaturation phenomenon, and the linear behaviour of the empirical law is well verified. Finally, the scaling-up effects on the high-voltage-device current capability are discussed.
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