Granulation of silicon surface through reactive ion etching
作者:
U. S. Tandon,
B. D. Pant,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 6
页码: 2419-2421
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586033
出版商: American Vacuum Society
关键词: ETCHING;ION BEAMS;SILICON;SURFACE STRUCTURE;MONOCRYSTALS;GRANULAR MATERIALS;TEXTURE;REFLECTIVITY;Si
数据来源: AIP
摘要:
A spherelike granular structure has been observed to appear on the surface of single crystal silicon as a result of a two step reactive ion etching (RIE). Fluorocarbon plasma in RIE mode has been found to create a micromasking of bare silicon. Subsequent application of silicon etch recipe produces a texture with submicron spherical granules. Energy dispersion of x ray and Auger spectra analysis reveal that the suspected deposition or adsorption of etchant and effluent species onto the final surface is insignificant. The technique has a potential for controlling the reflectivity of silicon in specific regions of the spectrum and providing a large throughput.
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