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Granulation of silicon surface through reactive ion etching

 

作者: U. S. Tandon,   B. D. Pant,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1992)
卷期: Volume 10, issue 6  

页码: 2419-2421

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586033

 

出版商: American Vacuum Society

 

关键词: ETCHING;ION BEAMS;SILICON;SURFACE STRUCTURE;MONOCRYSTALS;GRANULAR MATERIALS;TEXTURE;REFLECTIVITY;Si

 

数据来源: AIP

 

摘要:

A spherelike granular structure has been observed to appear on the surface of single crystal silicon as a result of a two step reactive ion etching (RIE). Fluorocarbon plasma in RIE mode has been found to create a micromasking of bare silicon. Subsequent application of silicon etch recipe produces a texture with submicron spherical granules. Energy dispersion of x ray and Auger spectra analysis reveal that the suspected deposition or adsorption of etchant and effluent species onto the final surface is insignificant. The technique has a potential for controlling the reflectivity of silicon in specific regions of the spectrum and providing a large throughput.

 

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