Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy
作者:
K. W. Carey,
R. Hull,
J. E. Fouquet,
F. G. Kellert,
G. R. Trott,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 12
页码: 910-912
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98798
出版商: AIP
数据来源: AIP
摘要:
Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high‐resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 A˚ with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half‐widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.
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