Effect of laser annealing on electrical and optical properties ofn‐mercury cadmium telluride
作者:
A. L. Dawar,
Savita Roy,
Tirlok Nath,
Sanjay Tyagi,
P. C. Mathur,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 7
页码: 3849-3852
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348440
出版商: AIP
数据来源: AIP
摘要:
Single crystals ofn‐Hg1−xCdxTe (x=0.18) were grown by the Bridgman technique. The bulk single crystals were irradiated with laser pulses of various energy densities. A pulsed laser (Nd:YAG) capable of producing 10‐ns pulses of 0.53‐&mgr;m wavelength (frequency doubled) with varying energy densities (2–50 mJ/cm2) was employed. dc conductivity and Hall coefficient measurements were made on the single crystal using the van der Pauw technique in the temperature range 77–300 K, for both as‐grown and laser‐irradiated samples. Also, transmission measurements of the samples were taken at room temperature. Both electrical and optical studies showed that laser irradiation introduces additional defects in mercury cadmium telluride (MCT), and its quality deteriorates instead of improving as observed in many other semiconductor materials. We found that laser irradiation increases free‐carrier concentration and decreases the band gap of MCT.
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