HgCdTe heterojunction contact photoconductor
作者:
D. L. Smith,
D. K. Arch,
R. A. Wood,
M. Walter Scott,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 1
页码: 83-85
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94978
出版商: AIP
数据来源: AIP
摘要:
A new photoconductor device structure is described utilizing a heterojunction contact which incorporates a higher band‐gap HgCdTe alloy between the metal contact and the normal band‐gap photoconductor. A theoretical treatment of the heterojunction contact photoconductor (HCP) device shows that carrier sweepout can be virtually eliminated; the calculations predict elimination of ‘‘saturation’’ of responsivity and a very large increase in responsivity. HCP devices were fabricated; experimental results verified the theory in several ways. A responsivity was measured at 80 K of about 450 000 V/W at 30 V/cm and over 1 500 000 V/W at 125 V/cm.
点击下载:
PDF
(242KB)
返 回