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The effect of infrared flash lamp annealing on the electrical properties of modulation‐doped GaAs/N–AlGaAs structures

 

作者: Y. Kajikawa,   K. Mizuguchi,   T. Murotani,   K. Fujikawa,   T. Sonoda,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 249-251

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582796

 

出版商: American Vacuum Society

 

关键词: annealing;electrical properties;gallium arsenides;molecular beam epitaxy;silicon;crystal doping;mobility;low temperature;flash heating;flash tubes;gallium arsenides;(Al,Ga)As

 

数据来源: AIP

 

摘要:

The difference between furnace annealing and infrared flash lamp annealing on the electrical properties of modulation‐doped GaAs/N–AlGaAs structures grown by MBE was observed. After furnace annealing at about 700 °C, the electron mobility at 77 K decreased drastically due to diffusion of Si impurity ions from the N–AlGaAs layer into the undoped GaAs layer. In contrast to this, the mobility remained at a high value using flash lamp annealing, offering an excellent alternative annealing method for modulation‐doped GaAs/N–AlGaAs structures.

 

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